IRFR3709ZTRPBF International Rectifier, IRFR3709ZTRPBF Datasheet - Page 3
![MOSFET N-CH 30V 86A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR3709ZTRPBF
Manufacturer Part Number
IRFR3709ZTRPBF
Description
MOSFET N-CH 30V 86A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR3709ZTRPBF.pdf
(12 pages)
Specifications of IRFR3709ZTRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
86A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2330pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR3709ZPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3709ZTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
10000
1000
1000
0.01
100
100
0.1
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
0
TOP
BOTTOM
T J = 175°C
1
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1
T J = 25°C
3
2.25V
20µs PULSE WIDTH
Tj = 25°C
4
V DS = 15V
20µs PULSE WIDTH
5
10
6
7
100
8
10000
1000
100
0.1
2.0
1.5
1.0
0.5
10
1
Fig 4. Normalized On-Resistance
0.1
Fig 2. Typical Output Characteristics
-60 -40 -20 0
I D = 30A
V GS = 10V
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
20 40 60 80 100 120 140 160 180
1
2.25V
20µs PULSE WIDTH
Tj = 175°C
10
100
3