IRFR3709ZTRPBF International Rectifier, IRFR3709ZTRPBF Datasheet - Page 7
![MOSFET N-CH 30V 86A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR3709ZTRPBF
Manufacturer Part Number
IRFR3709ZTRPBF
Description
MOSFET N-CH 30V 86A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR3709ZTRPBF.pdf
(12 pages)
Specifications of IRFR3709ZTRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
86A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2330pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR3709ZPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3709ZTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
+
R
-
D.U.T
Fig 15.
+
-
•
•
•
•
SD
•
•
•
Vgs(th)
Qgs1 Qgs2
Vds
Fig 16. Gate Charge Waveform
-
G
HEXFET
+
V
Qgd
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Qgodr
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7