IRFR3709ZTRPBF International Rectifier, IRFR3709ZTRPBF Datasheet - Page 4
![MOSFET N-CH 30V 86A DPAK](/photos/5/41/54121/21-dpak_to-225aa_sml.jpg)
IRFR3709ZTRPBF
Manufacturer Part Number
IRFR3709ZTRPBF
Description
MOSFET N-CH 30V 86A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFR3709ZTRPBF.pdf
(12 pages)
Specifications of IRFR3709ZTRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
86A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2330pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR3709ZPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3709ZTRPBF
Manufacturer:
IR
Quantity:
20 000
100000
4
10000
1000
1000
100
100
10
10
1
0
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
C oss
Drain-to-Source Voltage
C rss
C iss
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.5
Forward Voltage
T J = 25°C
1.0
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
I D = 12A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
V DS = 15V
10
10
15
100µsec
1msec
10msec
www.irf.com
100
20
1000
25