IRF6710S2TR1PBF International Rectifier, IRF6710S2TR1PBF Datasheet - Page 9
IRF6710S2TR1PBF
Manufacturer Part Number
IRF6710S2TR1PBF
Description
MOSFET N-CH 25V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6710S2TR1PBF.pdf
(10 pages)
Specifications of IRF6710S2TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.4V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1190pF @ 13V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.9 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
37 A
Power Dissipation
15 W
Gate Charge Qg
8.8 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6710S2TR1PBFTR
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DirectFET Part Marking
www.irf.com
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
1.08
1.70
MIN
4.75
3.70
2.75
0.35
0.48
0.58
0.48
N/A
0.80
0.68
0.020
0.08
METRIC
DIMENSIONS
1.12
1.80
MAX
4.85
3.95
2.85
0.45
0.52
0.62
0.52
N/A
0.90
0.740
0.080
0.17
N/A
0.187
0.146
0.108
0.014
0.019
0.023
0.019
0.042
0.031
0.066
0.027
0.001
0.003
MIN
IMPERIAL
0.191
0.156
0.112
0.018
0.020
0.024
0.020
0.044
N/A
0.035
0.070
0.029
0.003
0.007
MAX
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