STD100NH02LT4 STMicroelectronics, STD100NH02LT4 Datasheet - Page 5

• Manufacturer Part Number: STD100NH02LT4
• Description: MOSFET N-CH 24V 60A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD100NH02LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 3940pF @ 15V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4100-2

STD100NH02L
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
V
t
t
I
I
d(on)
d(off)
RRM
SDM
SD
I
Q
SD
t
t
t
rr
r
f
rr
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
Figure 13 on page 8
DD
G
I
I
di/dt = 100A/µs,
V
Figure 15 on page 8
SD
SD
DD
= 4.7Ω, V
= 10V, I
= 30A, V
= 60A,
Test conditions
= 15V, T
Test conditions
D
GS
= 30A,
GS
J
= 150°C
= 10V
= 0
Min.
Electrical characteristics
Min
Typ.
Typ.
200
2.5
47
58
15
60
35
Max.
Max
240
1.3
60
47
Unit
Unit
µC
ns
ns
ns
ns
ns
A
A
V
A
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