IRF5305PBF International Rectifier, IRF5305PBF Datasheet - Page 2

• Manufacturer Part Number: IRF5305PBF
• Description: MOSFET P-CH 55V 31A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5305PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: -31 A
• Gate Charge, Total: 63 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 8 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 31 A
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF5305PBF

IRF5305PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
fs
D
S
(BR)DSS
GS(th)
SD
2
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
V
(BR)DSS
R
max. junction temperature. ( See fig. 11 )
DD
G
= 25Ω, I
= -25V, starting T
/∆T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
AS
= -16A. (See Figure 12)
J
= 25°C, L = 2.1mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
––– -0.034 –––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
SD
Min. Typ. Max. Units
-55
Min. Typ. Max. Units
8.0
–––
–––
–––
–––
–––
–––
J
≤ 175°C
≤ -16A, di/dt ≤ -280A/µs, V
1200 –––
250
–––
––– 0.06
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
520
–––
–––
–––
170
4.5
14
66
39
63
7.5
71
–––
-110
–––
-4.0
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.3
110
250
-25
63
13
29
-31
V/°C
µA
nC
nH
nA
ns
pF
nC
ns
Ω
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
DD
= -16A
= -16A
= 25°C, I
= 25°C, I
= 1.6Ω, See Fig. 10
= 6.8Ω
= 0V, I
= -10V, I
= V
= -25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -44V
= -10V, See Fig. 6 and 13
= 0V
= -25V
= -28V
≤ V
GS
(BR)DSS
, I
D
S
F
D
Conditions
= -250µA
D
D
Conditions
= -16A, V
= -16A
GS
GS
= -250µA
= -16A
= -16A
,
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
G
J
= 150°C
= 0V
G
D
S
S
D