IRF5305PBF International Rectifier, IRF5305PBF Datasheet - Page 4
![MOSFET P-CH 55V 31A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF5305PBF
Manufacturer Part Number
IRF5305PBF
Description
MOSFET P-CH 55V 31A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF5305PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
-31 A
Gate Charge, Total
63 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
110 W
Resistance, Drain To Source On
0.06 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
39 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 31 A
Mounting Style
Through Hole
Gate Charge Qg
42 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF5305PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF5305PBF
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
IRF5305PBF
Manufacturer:
IR
Quantity:
20 000
IRF5305PbF
4
2500
2000
1500
1000
1000
500
100
10
0
Fig 5. Typical Capacitance Vs.
0.4
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
C
C
C
-V
iss
oss
rss
-V
SD
DS
Forward Voltage
V
C
C
C
0.8
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
, Source-to-Drain Voltage (V)
T = 175°C
J
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
1.2
gd
gd
f = 1MHz
T = 25°C
J
, C
ds
1.6
SHORTED
V
GS
= 0V
100
2.0
A
A
1000
100
20
16
12
10
8
4
0
1
0
1
Fig 8. Maximum Safe Operating Area
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
= -16A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
10
-V
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
20
BY R
V
V
30
10
DS
DS
DS(on)
= -44V
= -28V
FOR TEST CIRCUIT
SEE FIGURE 13
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40
50
100µs
1ms
10ms
100
60
A
A