IRF5305PBF International Rectifier, IRF5305PBF Datasheet - Page 4

• Manufacturer Part Number: IRF5305PBF
• Description: MOSFET P-CH 55V 31A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5305PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: -31 A
• Gate Charge, Total: 63 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 8 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 31 A
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF5305PBF

IRF5305PbF
4
2500
2000
1500
1000
1000
500
100
10
0
Fig 5. Typical Capacitance Vs.
0.4
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
C
C
C
-V
iss
oss
rss
-V
SD
DS
Forward Voltage
V
C
C
C
0.8
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
, Source-to-Drain Voltage (V)
T = 175°C
J
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
1.2
gd
gd
f = 1MHz
T = 25°C
J
, C
ds
1.6
SHORTED
V
GS
= 0V
100
2.0
A
A
1000
100
20
16
12
10
8
4
0
1
0
1
Fig 8. Maximum Safe Operating Area
I
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
C
J
= -16A
= 25°C
= 175°C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
10
-V
Q , Total Gate Charge (nC)
DS
G
, Drain-to-Source Voltage (V)
20
BY R
V
V
30
10
DS
DS
DS(on)
= -44V
= -28V
FOR TEST CIRCUIT
SEE FIGURE 13
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40
50
100µs
1ms
10ms
100
60
A
A