IRF5305PBF International Rectifier, IRF5305PBF Datasheet - Page 5

• Manufacturer Part Number: IRF5305PBF
• Description: MOSFET P-CH 55V 31A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5305PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: -31 A
• Gate Charge, Total: 63 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 110 W
• Resistance, Drain To Source On: 0.06 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 39 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 8 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 31 A
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF5305PBF

www.irf.com
0.01
0.1
35
30
25
20
15
10
10
0.00001
5
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
Case Temperature
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
125
t , Rectangular Pulse Duration (sec)
°
1
150
175
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
10%
90%
V
GS
DS
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
-10V
t
V
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
GS
V
DS
t
r
J
0.01
IRF5305PbF
DM
x Z
1
D.U.T.
thJC
P
2
DM
R
t
+ T
d(off)
D
C
t
1
t
f
t
2
-
+
V
DD
0.1
5