IRF1404ZPBF International Rectifier, IRF1404ZPBF Datasheet

IRF1404ZPBF

Manufacturer Part Number

IRF1404ZPBF

Description

MOSFET N-CH 40V 75A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF1404ZPBF.pdf (12 pages)

2.IRF1404ZPBF.pdf (3 pages)

Specifications of IRF1404ZPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.7 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

150nC @ 10V

Input Capacitance (ciss) @ Vds

4340pF @ 25V

Power - Max

200W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current, Drain

190 A

Gate Charge, Total

100 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

220 W

Resistance, Drain To Source On

2.7 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

36 ns

Time, Turn-on Delay

18 ns

Transconductance, Forward

170 S

Voltage, Breakdown, Drain To Source

40 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

190 A

Mounting Style

Through Hole

Gate Charge Qg

100 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRF1404ZPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF1404ZPBF

Manufacturer:

VISHAY

Quantity:

6 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF1404ZPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 12
Download datasheet (402Kb)

Description

This HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature,

fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in a wide variety of applications.

Features

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

(Tested )

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

Power MOSFET utilizes the latest

Parameter

@ 10V

(Silicon Limited)

(Package Limited)

IRF1404ZPbF

TO-220AB

HEXFET

See Fig.12a, 12b, 15, 16

300 (1.6mm from case )

Typ.

0.50

–––

10 lbf

IRF1404ZSPbF

-55 to + 175

Max.

in (1.1N

180

120

710

200

± 20

330

480

1.3

Pak

IRF1404ZSPbF

IRF1404ZLPbF

IRF1404ZPbF

Power MOSFET

DS(on)

0.75

Max.

DSS

–––

IRF1404ZLPbF

= 75A

PD - 96040B

= 3.7mΩ

= 40V

TO-262

Units

W/°C

°C/W

°C

Related parts for IRF1404ZPBF

IRF1404ZPBF Summary of contents

Page 1

... R Junction-to-Ambient θJA R Junction-to-Ambient (PCB Mount) θJA www.irf.com G TO-220AB IRF1404ZPbF Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter 96040B IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF ® HEXFET Power MOSFET 40V DSS R = 3.7mΩ DS(on 75A Pak TO-262 IRF1404ZSPbF IRF1404ZLPbF Max. Units 180 120 A 75 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100 15V 20µs PULSE WIDTH 1 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 6000 Ciss 4000 2000 Coss Crss ...

Page 5

LIMITED BY PACKAGE 160 120 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 1000 0.01 100 0.05 0. 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 400 TOP Single Pulse BOTTOM 10% Duty Cycle 75A 300 200 100 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE AS SEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" Notes: 1. For an Automotive Qualified version of this part ...

Page 10

T HIS IS AN IRF 530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 ASSE MBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBL 19, 1997 EMBLY LINE "C" OR Notes: 1. ...

Page 12

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes: Repetitive rating; ...

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