IRF1404ZPBF International Rectifier, IRF1404ZPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1404ZPBF
• Description: MOSFET N-CH 40V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1404ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 190 A
• Gate Charge, Total: 100 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 220 W
• Resistance, Drain To Source On: 2.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 36 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 170 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 190 A
• Mounting Style: Through Hole
• Gate Charge Qg: 100 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1404ZPBF

Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Source-Drain Ratings and Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
2
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
0.033
4340
1030
3300
1350
–––
–––
–––
–––
–––
–––
–––
100
110
550
920
–––
–––
–––
2.7
4.5
7.5
31
42
18
36
58
28
34
-200
–––
–––
–––
250
200
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
750
3.7
4.0
1.3
20
75
42
51
V/°C
mΩ
nC
nH
nC
µA
nA
pF
ns
ns
V
V
V
A
V
Between lead,
from package
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
6mm (0.25in.)
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 25°C, I
= 25°C, I
= 3.0 Ω
= V
= 25V, I
= 40V, V
= 40V, V
= 32V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 20V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
e
e
D
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 150µA
= 75A, V
= 75A
= 75A, V
= 75A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
DD
GS
J
= 125°C
= 20V
= 0V
f
e