IRF1404ZPBF International Rectifier, IRF1404ZPBF Datasheet - Page 8

• Manufacturer Part Number: IRF1404ZPBF
• Description: MOSFET N-CH 40V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1404ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 190 A
• Gate Charge, Total: 100 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 220 W
• Resistance, Drain To Source On: 2.7 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 36 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 170 S
• Voltage, Breakdown, Drain To Source: 40 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 190 A
• Mounting Style: Through Hole
• Gate Charge Qg: 100 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF1404ZPBF

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D.U.T
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Fig 17.
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SD
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Fig 18b. Switching Time Waveforms
Fig 18a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
-
„
G
HEXFET
t
d(on)
+
t
r
®
≤ 0.1 %
≤ 1
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V