STP8NK80ZFP STMicroelectronics, STP8NK80ZFP Datasheet - Page 5

• Manufacturer Part Number: STP8NK80ZFP
• Description: MOSFET N-CH 800V 6.2A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP8NK80ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1320pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.5 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5982-5

STP8NK80Z - STP8NK80ZFP - STW8NK80Z
Table 7.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
Symbol
BV
I
Symbol
V
SDM
I
RRM
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
I
SD
Q
SD
t
GSO
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1mA (Open Drain)
Source drain diode
Gate-source zener diode
Parameter
Parameter
I
I
V
(see
SD
SD
DD
= 6.2 A, V
= 6.2 A, di/dt = 100 A/µs
= 50 V, Tj = 150°C
Figure
Test conditions
Test conditions
23)
GS
= 0
Electrical characteristics
Min.
Min.
30
2990
Typ.
Typ.
460
13
Max.
Max.
24.8
6.2
1.6
ns
nC
A
Unit
Unit
V
5/15
A
A
V