IRF2907ZS-7PPBF International Rectifier, IRF2907ZS-7PPBF Datasheet - Page 4
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IRF2907ZS-7PPBF
Manufacturer Part Number
IRF2907ZS-7PPBF
Description
MOSFET N-CH 75V 160A D2PAK7
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF2907ZS-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 mOhm @ 110A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
7580pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Current, Drain
160 A
Gate Charge, Total
170 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
3 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
92 ns
Time, Turn-on Delay
21 ns
Transconductance, Forward
94 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
100000
10000
4
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
0.2
T J = 175°C
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.4
C rss
C iss
C oss
0.6
f = 1 MHZ
10
0.8
T J = 25°C
1.0
V GS = 0V
1.2
100
1.4
10000
1000
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0.1
0
Fig 6. Typical Gate Charge vs.
I D = 110A
Tc = 25°C
Tj = 175°C
Single Pulse
LIMITED BY PACKAGE
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
50
V DS = 60V
V DS = 38V
V DS = 15V
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
10.0
www.irf.com
10msec
100µsec
DC
150
100.0
200