IRF2907ZS-7PPBF International Rectifier, IRF2907ZS-7PPBF Datasheet - Page 8
![MOSFET N-CH 75V 160A D2PAK7](/photos/5/50/55043/21-d2pak-7_sml.jpg)
IRF2907ZS-7PPBF
Manufacturer Part Number
IRF2907ZS-7PPBF
Description
MOSFET N-CH 75V 160A D2PAK7
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF2907ZS-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.8 mOhm @ 110A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
7580pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Current, Drain
160 A
Gate Charge, Total
170 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
3 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
92 ns
Time, Turn-on Delay
21 ns
Transconductance, Forward
94 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
8
+
-
D.U.T
Fig 17.
+
-
SD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
G
HEXFET
t
d(on)
+
t
r
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
for N-Channel
Ripple
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V