IRF2907ZS-7PPBF International Rectifier, IRF2907ZS-7PPBF Datasheet - Page 8

• Manufacturer Part Number: IRF2907ZS-7PPBF
• Description: MOSFET N-CH 75V 160A D2PAK7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2907ZS-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Current, Drain: 160 A
• Gate Charge, Total: 170 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 3 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 92 ns
• Time, Turn-on Delay: 21 ns
• Transconductance, Forward: 94 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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+
-
D.U.T
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Fig 17.
+
-
SD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
G
„
HEXFET
t
d(on)
+
t
r
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
for N-Channel
Ripple
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
www.irf.com
Period
P.W.
V
V
I
SD
GS
DD
=10V