STB185N55F3 STMicroelectronics, STB185N55F3 Datasheet - Page 4

• Manufacturer Part Number: STB185N55F3
• Description: MOSFET N-CH 55V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB185N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0038 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7940-2; STB185N55F3

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
I
V
V
V
V
V
D²PAK
TO-220
V
V
V
V
R
(see Figure 13,
Figure 18)
V
V
(see
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
DD
GS
G
= 250µA, V
= 4.7Ω V
= max rating,
= max rating,@125°C
= V
= 10V, I
= ±20V
Test conditions
Test conditions
= 15V
= 25V, f = 1MHz,
= 0
= 10V,
= 27.5V, I
= 44V, I
Figure
GS
, I
,
D
D
14)
I
GS
D
= 60A
D
= 250µA
GS
D
= 120A,
= 60A
= 10V
= 60A
= 0
STB185N55F3 - STP185N55F3
Min.
Min.
55
2
6800
1450
Typ.
Typ.
150
150
110
100
2.9
3.2
15
25
50
30
26
Max.
Max.
±
100
3.5
3.8
200
10
4
Unit
Unit
mΩ
mΩ
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S