NTHD3101FT1G ON Semiconductor, NTHD3101FT1G Datasheet

MOSFET P-CH 20V 3.2A CHIPFET

NTHD3101FT1G

Manufacturer Part Number
NTHD3101FT1G
Description
MOSFET P-CH 20V 3.2A CHIPFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTHD3101FT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
80 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
680pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-ChipFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTHD3101FT1GOSTR

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NTHD3101F
Power MOSFET and
Schottky Diode
−20 V, FETKYt, P−Channel, −4.4 A, with
4.1 A Schottky Barrier Diode, ChipFETt
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 4
MOSFET MAXIMUM RATINGS
SCHOTTKY DIODE MAXIMUM RATINGS
(T
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP−6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Independent Pinout to each Device to Ease Circuit Design
Trench P−Channel for Low On Resistance
Ultra Low V
Pb−Free Packages are Available
Li−Ion Battery Charging
High Side DC−DC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered Products
J
[1 oz] including traces).
Current (Note 1)
(Note 1)
(1/8″ from case for 10 s)
= 25°C unless otherwise noted)
Forward Current
F
Parameter
Parameter
Schottky
Steady
t ≤ 5 s
Steady
Steady
State
t ≤ 5 s
t ≤ 5 s
State
State
t
p
= 10 ms
T
T
T
T
T
(T
J
J
J
J
J
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
J
= 25°C unless otherwise noted)
T
Symbol
Symbol
J
V
V
V
, T
I
P
V
T
RRM
DSS
DM
I
I
I
GS
D
S
F
D
R
L
STG
−55 to
Value
Value
±8.0
−3.2
−2.3
−4.4
−20
−13
150
260
1.1
2.1
2.5
2.2
4.1
20
20
1
Units
Units
°C
°C
W
V
V
A
A
A
V
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
V
V
G
G
A
A
S
CONNECTIONS
(BR)DSS
−20 V
R
20 V
P−Channel MOSFET
MAX
1
2
3
4
ORDERING INFORMATION
PIN
1
D1 = Specific Device Code
M
G
SCHOTTKY DIODE
S
http://onsemi.com
= Month Code
= Pb−Free Package
8
7
6
5
64 mW @ −4.5 V
85 mW @ −2.5 V
8
R
D
MOSFET
DS(on)
C
C
D
D
0.510 V
V
F
Publication Order Number:
TYP
TYP
1
2
3
4
CASE 1206A
MARKING
DIAGRAM
Schottky Diode
ChipFET
STYLE 3
NTHD3101F/D
C
A
I
I
D
−4.4 A
F
4.1 A
MAX
MAX
8
7
6
5

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NTHD3101FT1G Summary of contents

Page 1

NTHD3101F Power MOSFET and Schottky Diode −20 V, FETKYt, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package • Leadless SMD Package ...

Page 2

THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient – t ≤ (Note 2) 2. Surface Mounted on FR4 Board using pad size (Cu area = 1.127 oz] including traces). ...

Page 3

TYPICAL P−CHANNEL PERFORMANCE CURVES − −3 − −2 −V , DRAIN−TO−SOURCE VOLTAGE ...

Page 4

TYPICAL P−CHANNEL PERFORMANCE CURVES 1500 ISS 1200 900 600 C RSS 300 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance ...

Page 5

TYPICAL SCHOTTKY PERFORMANCE CURVES 150° 25° −55°C J 0.1 0.20 0.40 0. INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F Figure 11. Typical Forward Voltage 1E− 150°C J 100E−6 ...

Page 6

... DEVICE ORDERING INFORMATION Device NTHD3101FT1 NTHD3101FT1G NTHD3101FT3 NTHD3101FT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package ChipFET ChipFET (Pb−Free) ChipFET ChipFET (Pb−Free) http://onsemi.com 6 † Shipping 3000 / Tape & ...

Page 7

... A 0.457 0.018 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ChipFET is a trademark of Vishay Siliconix. FETKY is a registered trademark of International Rectifier Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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