NTHD3101FT1G ON Semiconductor, NTHD3101FT1G Datasheet - Page 2

• Manufacturer Part Number: NTHD3101FT1G
• Description: MOSFET P-CH 20V 3.2A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3101FT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 680pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3101FT1GOSTR

2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
THERMAL RESISTANCE RATINGS
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient – t ≤ 10 s (Note 2)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold
Temperature Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Maximum Instantaneous
Forward Voltage
Maximum Instantaneous
Reverse Current
Temperature Coefficient
Parameter
Parameter
Parameter
V
V
V
(BR)DSS
Symbol
Symbol
V
Q
GS(TH)
R
Q
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
I
C
G(TOT)
Q
I
DS(on)
Q
d(ON)
Q
V
g
DSS
GSS
G(TH)
t
V
OSS
RSS
RR
I
t
t
FS
ISS
t
t
GS
GD
SD
RR
R
a
b
r
f
F
/T
/T
J
J
(T
J
= 25°C unless otherwise noted)
V
http://onsemi.com
V
DS
GS
= −16 V, V
V
V
= 0 V, I
V
GS
GS
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
DS
GS
(T
GS
GS
GS
GS
= −4.5 V, V
= −4.5 V, V
= −3.2 A, R
Test Conditions
dI
Test Conditions
J
2
= V
= −10 V, I
= 0 V, V
= 0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, I
= −4.5, I
= −2.5, I
= −1.8, I
= 25°C unless otherwise noted)
S
S
V
I
/dt = 100 A/ms
V
V
D
= −2.5 A
I
I
DS
DS
F
F
GS
R
R
= −3.2 A
= 0.1 A
= 1.0 A
, I
= −10 V
= 10 V
= 20 V
= 0 V
D
S
D
GS
D
D
D
= −250 mA
= −1.0 A ,
DD
D
DS
= −250 mA
G
= −3.2 A
= −2.2 A
= −1.0 A
= ±8.0 V
= −2.9 A
= 2.4 W
= −10 V,
= −10 V,
T
T
T
J
J
J
= 125°C
= 25°C
= 25°C
Symbol
R
R
qJA
qJA
−0.45
Min
−20
Min
0.425
0.510
11.7
12.4
−0.8
13.5
Typ
Typ
−15
120
680
100
2.7
8.0
7.4
0.6
1.4
2.5
5.8
9.5
4.0
6.5
64
85
70
16
Max
113
60
0.575
±100
Max
−1.0
−5.0
−1.5
−1.2
Max
170
110
1.0
5.0
80
Units
°C/W
°C/W
mV/°C
mV/°C
Units
Units
mW
nA
nC
nC
mA
pF
mA
ns
ns
V
V
S
V
V