NTHD3101FT1G ON Semiconductor, NTHD3101FT1G Datasheet - Page 3

• Manufacturer Part Number: NTHD3101FT1G
• Description: MOSFET P-CH 20V 3.2A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3101FT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 680pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3101FT1GOSTR

0.175
0.125
0.075
0.05
0.15
8
7
6
5
4
3
2
1
0
9
0.2
0.1
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
Figure 3. On−Resistance vs. Gate−to−Source
1
1
−50
−V
1
I
V
D
−V
Figure 1. On−Region Characteristics
DS
GS
−25
= −3.2 A
Figure 5. On−Resistance Variation with
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−2.6 V
= −4.5 V
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
−T
V
V
GS
GS
J
3
0
, JUNCTION TEMPERATURE (°C)
= −3 V
= −5 V to −3.6 V
4
Voltage
25
3
Temperature
5
TYPICAL P−CHANNEL PERFORMANCE CURVES
50
6
4
−2.4 V
−2.2 V
−1.8 V
−1.6 V
−1.4 V
−2 V
75
7
I
T
(T
100
D
8
J
T
J
= −3.2 A
= 25°C
J
5
= 25°C unless otherwise noted)
= 25°C
http://onsemi.com
9
125
10
150
6
3
0.175
0.125
0.075
1000
0.15
0.05
100
0.2
0.1
10
9
8
7
6
5
4
3
2
1
0
2
Figure 4. On−Resistance vs. Drain Current and
0
2
V
V
T
GS
Figure 6. Drain−to−Source Leakage Current
DS
J
−V
−V
= 25°C
4
= 0 V
≥ −10 V
0.5
DS
GS
Figure 2. Transfer Characteristics
3
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
6
D,
25°C
DRAIN CURRENT (AMPS)
1
T
C
4
8
Gate Voltage
= −55°C
V
T
vs. Voltage
V
1.5
GS
J
10
GS
= 100°C
= −2.5 V
= −4.5 V
5
100°C
12
2
14
6
2.5
16
7
3
18
3.5
20
8