MCH3377-TL-E SANYO, MCH3377-TL-E Datasheet

MCH3377-TL-E

Manufacturer Part Number

MCH3377-TL-E

Description

MOSFET P-CH 20V 3A MCPH3

Manufacturer

SANYO

Datasheet

1.MCH3377-TL-E.pdf (4 pages)

Specifications of MCH3377-TL-E

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

83 mOhm @ 1.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Gate Charge (qg) @ Vgs

4.6nC @ 4.5V

Input Capacitance (ciss) @ Vds

375pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

3-MCPH

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Vgs(th) (max) @ Id

Other names

869-1169-2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MCH3377-TL-E

Manufacturer:

ON Semiconductor

Quantity:

400

Company:

Meier Automation Equipment Co., Limited

Part Number:

MCH3377-TL-E

Manufacturer:

SANYO/三洋

Quantity:

20 000

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Ordering number : ENA0957

MCH3377

Features

Specifications

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : QJ

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Ultrahigh-speed switching.

1.8V drive

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace

instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case

of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee

thereof. If you should intend to use our products for applications outside the standard applications of our

customer who is considering such use and/or outside the scope of our intended standard applications, please

consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our

customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer ' s products or

equipment.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V GSS

V DSS

⏐ yfs ⏐

I DSS

I GSS

Tstg

I DP

Tch

P D

I D

SANYO Semiconductors

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm

I D =- -1mA, V GS =0V

V DS =- -20V, V GS =0V

V GS =±8V, V DS =0V

V DS =- -10V, I D =- -1mA

V DS =- -10V, I D =- -1.5A

I D =- -1.5A, V GS =- -4.5V

I D =- -1A, V GS =- -2.5V

I D =- -0.2A, V GS =- -1.8V

MCH3377

Conditions

✕0.8mm)

DATA SHEET

N1407PE TI IM TC-00001025

min

--0.4

--20

2.2

Ratings

typ

Ratings

130

3.8

Continued on next page.

--55 to +150

max

±10

150

--1.3

--20

--12

±10

125

200

--3

No. A0957-1/4

--1

Unit

mΩ

µA

°C

Related parts for MCH3377-TL-E

MCH3377-TL-E Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN MCH3377 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... Switching Time Test Circuit --5 --4 --3 --2 -- --1.0V 0 --0.7 --0.8 --0.9 --1.0 0 IT13008 Ratings min typ max 375 4.6 0.8 1 0.83 1 --10V -- --1. =6.67Ω OUT PW=10µs D.C.≤1% G MCH3377 P.G 50Ω --10V --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage No. A0957-2/4 Unit --2.5 IT13009 ...

Page 3

... Drain Current Time -- 100 --0.1 --1.0 Drain Current --4 --10V --3A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge MCH3377 250 Ta=25°C 200 150 100 50 0 --6 --7 --8 --60 --40 IT13010 -- --10V --1 --0 --0. --0.001 --10 IT13012 1000 --10V -- 100 ...

Page 4

... Ambient Temperature °C Note on usage : Since the MCH3377 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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