SIB452DK-T1-GE3 Vishay, SIB452DK-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIB452DK-T1-GE3
• Description: MOSFET N-CH 190V 1.5A SC75-6
• Manufacturer: Vishay

Specifications of SIB452DK-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 190V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 135pF @ 50V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Dual Source
• Resistance Drain-source Rds (on): 2.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 190 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 0.67 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 190V
• On Resistance Rds(on): 2.4ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB452DK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68832
S-81724-Rev. A, 04-Aug-08
2.0
1.6
1.2
0.8
0.4
0.0
0
25
T
D
C
Current Derating*
50
is based on T
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
New Product
15
12
9
6
3
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiB452DK
www.vishay.com
125
150
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