SIB452DK-T1-GE3 Vishay, SIB452DK-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIB452DK-T1-GE3
• Description: MOSFET N-CH 190V 1.5A SC75-6
• Manufacturer: Vishay

Specifications of SIB452DK-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 190V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 135pF @ 50V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Dual Source
• Resistance Drain-source Rds (on): 2.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 190 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 0.67 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 190V
• On Resistance Rds(on): 2.4ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB452DK-T1-GE3TR

SiB452DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
1
1
10
10
http://www.vishay.com/ppg?68832.
-4
-4
0.2
Single Pulse
0.1
Duty Cycle = 0.5
0.2
0.05
Duty Cycle = 0.5
0.1
0.02
0.02
0.05
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
S-81724-Rev. A, 04-Aug-08
DM
Document Number: 68832
100
Z
thJA
thJA
t
t
1
2
(t)
= 80 °C/W
1000
10
-1