CPH3327-TL-E SANYO, CPH3327-TL-E Datasheet - Page 3

• Manufacturer Part Number: CPH3327-TL-E
• Description: MOSFET P-CH 100V 0.6A CPH3
• Manufacturer: SANYO

Specifications of CPH3327-TL-E

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.45 Ohm @ 300mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 245pF @ 20V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 3-CPH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1127-2

--10
1.0
1.0
0.1
1.2
1.0
0.8
0.6
0.4
0.2
10
--8
--6
--4
--2
--0.01
0
5
3
2
7
5
3
2
--0.1
0
7
5
3
2
7
5
3
2
0
0
V DS = --50V
I D = --0.6A
20
1
2
Ambient Temperature, Ta -- C
2
3
40
2
Total Gate Charge, Qg -- nC
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
5
3
60
V GS -- Qg
3
P D -- Ta
y
7
fs -- I D
t d (on)
--0.1
80
4
5
100
5
2
7
120
3
--1.0
6
V DD = --50V
V GS = -- 10 V
V DS = --10V
5
140
7
IT07482
IT07484
IT07486
IT07488
7
--1.0
160
CPH3327
8
2
--0.001
--0.01
--0.01
--1.0
--0.1
--1.0
--0.1
100
10
--0.01
7
5
3
2
7
5
3
2
7
7
5
3
2
7
5
3
2
--0.4
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
V GS =0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
--0.5
--5
5 7
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
--0.1
Operation in this
area is limited by R DS (on).
2 3
--0.6
--10
I F -- V SD
5 7
A S O
--1.0
--0.7
--15
2 3
5 7
--0.8
--20
--10
2
0.8mm)
2 3
<10 s
--0.9
--25
No.7914-3/4
f=1MHz
5 7
IT07483
IT07485
IT07487
--100
--1.0
--30
2