SIA413DJ-T1-GE3 Vishay, SIA413DJ-T1-GE3 Datasheet

MOSFET P-CH 12V 12A SC70-6

SIA413DJ-T1-GE3

Manufacturer Part Number
SIA413DJ-T1-GE3
Description
MOSFET P-CH 12V 12A SC70-6
Manufacturer
Vishay
Datasheet

Specifications of SIA413DJ-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
29 mOhm @ 6.7A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
57nC @ 8V
Input Capacitance (ciss) @ Vds
1800pF @ 10V
Power - Max
19W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.029 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
10 A
Power Dissipation
3500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-12A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA413DJ-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA413DJ-T1-GE3
Manufacturer:
IDT
Quantity:
97
Part Number:
SIA413DJ-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIA413DJ-T1-GE3
Quantity:
700
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 70447
S-80435-Rev. C, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 12
2.05 mm
6
(V)
PowerPAK SC-70-6L-Single
D
5
D
4
0.029 at V
0.034 at V
0.044 at V
S
0.10 at V
D
h
R
1
S
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
2.05 mm
GS
2
GS
GS
GS
G
= - 1.5 V
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
3
= 150 °C)
b, f
P-Channel 12-V (D-S) MOSFET
Ordering Information:SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
- 12
- 12
- 12
Part # code
D
- 3
(A)
a
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
23 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
B F X
X X X
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, PA Switch and Battery Switch for Portable
Symbol
Symbol
T
R
R
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
5.3
28
- 55 to 150
- 2.9
- 10
3.5
2.2
Limit
- 8
- 12
- 12
- 12
- 12
- 40
260
± 8
19
12
b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
6.5
36
Vishay Siliconix
G
®
P-Channel MOSFET
SiA413DJ
www.vishay.com
D
S
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIA413DJ-T1-GE3 Summary of contents

Page 1

... SC-70 Package Small Footprint Area - 12 - Low On-Resistance - 3 APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information:SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ...

Page 2

... SiA413DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... New Product thru 2 1 2.0 2.5 3.0 3000 2500 2000 1500 1000 V = 4.5 V 500 1 1.0 0.9 0 SiA413DJ Vishay Siliconix ° 125 ° 0.0 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... SiA413DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.060 0.048 °C J 0.036 0.024 0.012 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70447 S-80435-Rev. C, 03-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiA413DJ Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... SiA413DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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