SIA413DJ-T1-E3 Vishay/Siliconix, SIA413DJ-T1-E3 Datasheet
SIA413DJ-T1-E3
Specifications of SIA413DJ-T1-E3
Related parts for SIA413DJ-T1-E3
SIA413DJ-T1-E3 Summary of contents
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... stg d, e Symbol t thJA Steady State R thJC pmostechsupport@vishay.com This document is subject to change without notice. SiA413DJ Vishay Siliconix ® Power MOSFET ® Lot Traceability and Date code P-Channel MOSFET Limit Unit - 12 ± ...
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... SiA413DJ Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... V = 4.5 V 500 1.2 1 1.0 0.9 0 pmostechsupport@vishay.com This document is subject to change without notice. SiA413DJ Vishay Siliconix ° 125 ° °C C 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...
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... SiA413DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 ° 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com For more information please contact: 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max.) pmostechsupport@vishay.com This document is subject to change without notice. SiA413DJ Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com www.vishay.com/doc?91000 ...
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... SiA413DJ Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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PowerPAK SC70-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.23 0.30 0.38 C 0.15 0.20 0.25 D 1.98 2.05 2.15 D1 0.85 0.95 ...
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RECOMMENDED PAD LAYOUT FOR PowerPAK 0.300 (0.012) (0.059) 2.200 (0.087) 1.500 0.350 (0.014) Return to Index Document Number: 70486 Revision: 21-Jan-08 ® SC70-6L Single 0.650 (0.026) 1 0.650 (0.026) 0.950 (0.037) Dimensions in mm/(Inches) Application Note 826 Vishay Siliconix 0.350 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...