SIA413DJ-T1-GE3 Vishay, SIA413DJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA413DJ-T1-GE3
• Description: MOSFET P-CH 12V 12A SC70-6
• Manufacturer: Vishay

Specifications of SIA413DJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 8V
• Input Capacitance (ciss) @ Vds: 1800pF @ 10V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.029 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA413DJ-T1-GE3TR

SiA413DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
- 50
1
0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
I
0.4
T
D
J
= 250 µA
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
75
0.8
0.01
100
0.1
100
10
1
0.1
T
1.0
J
* V
= 25 °C
125
Safe Operating Area, Junction-to-Ambient
Single Pulse
Limited by R
T
GS
A
= 25 °C
150
1.2
minimum V
V
New Product
DS
- Drain-to-Source Voltage (V)
DS(on)
1
BVDSS Limited
GS
*
at which R
10
DS(on)
0.060
0.048
0.036
0.024
0.012
100 µs
10 ms
1 s
10 s
1 ms
100 ms
DC
30
25
20
15
10
5
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
= 6.7 A
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
S-80435-Rev. C, 03-Mar-08
Document Number: 70447
3
10
T
T
A
A
= 25 °C
= 125 °C
100
4
1000
5