STS4DPFS30L STMicroelectronics, STS4DPFS30L Datasheet

MOSFET P-CH 30V 5A 8-SOIC

STS4DPFS30L

Manufacturer Part Number
STS4DPFS30L
Description
MOSFET P-CH 30V 5A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS4DPFS30L

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
55 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 5V
Input Capacitance (ciss) @ Vds
1350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
4 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-4397-2

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Part Number:
STS4DPFS30L
Manufacturer:
ST
0
Table 1: General Features
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
Table 2: Order Codes
December 2004
TYPICAL R
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DC/DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
POWER MANAGEMENT IN CELLULAR
PHONES
DC MOTOR DRIVE
MOSFET TYPE
STS4DPFS30L
PART NUMBER
SCHOTTKY
STS4DPF30L
DS(on)
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
= 0.045
V
I
30 V
F(AV)
3 A
DSS
< 0.055
MARKING
R
4DFS30L
V
30 V
DS(on)
RRM
V
0.51 V
P-CHANNEL 30V - 0.045 - 5A SO-8
F(MAX)
5 A
I
D
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
SO-8
STS4DPFS30L
SO-8
TAPE & REEL
PACKAGING
Rev. 1
1/9

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STS4DPFS30L Summary of contents

Page 1

... POWER MANAGEMENT IN CELLULAR PHONES DC MOTOR DRIVE Table 2: Order Codes PART NUMBER STS4DPF30L December 2004 P-CHANNEL 30V - 0.045 - 5A SO-8 Figure 1: Package R I DS(on) D < 0.055 RRM F(MAX 0.51 V Figure 2: Internal Schematic Diagram MARKING PACKAGE 4DFS30L SO-8 STS4DPFS30L SO-8 PACKAGING TAPE & REEL Rev. 1 1/9 ...

Page 2

... STS4DPFS30L Table 3: MOSFET Absolute Maximum Ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Single Operating I Drain Current (continuous Single Operating Drain Current (pulsed Total Dissipation at T TOT T Operating Junction Temperature j T Storage Temperature stg ( ) Pulse width limited by safe operating area ...

Page 3

... GS (see, Figure 16) Test Conditions di/dt = 100 A/µ 15V 150° (see, Figure 17) Test Conditions ° 125 ° ° 125 ° STS4DPFS30L Min. Typ. Max. Unit 10 1350 pF 490 pF 130 pF Min. Typ. Max. Unit 12 Min. Typ. Max. Unit 125 Min. Typ. Max. Unit ...

Page 4

... STS4DPFS30L Figure 3: Safe Operating Figure 4: Output Characteristics Figure 5: Transconductance 4/9 Figure 6: Thermal Impedance Figure 7: Transfer Characteristics Figure 8: Static Drain-Source On Resistance ...

Page 5

... Figure 9: Gate Charge vs Gate-Source Voltage Figure 10: Normalized Gate Thereshlod Volt- age vs Temperature Figure 11: Source-Drain Diode Forward Char- acteristics Figure 12: Capacitances Variations Figure 13: Normalized On Resistance vs Tem- perature Figure 14: Normalized BVdss vs Temperature STS4DPFS30L 5/9 ...

Page 6

... STS4DPFS30L Figure 15: Unclamped Inductive Load Test Cir- cuit Figure 16: Switching Times Test Circuit For Resistive Load Figure 17: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/9 Figure 18: Unclamped Inductive Wafeform Figure 19: Gate Charge Test Circuit ...

Page 7

... TYP. 1.75 0.25 0.003 1.65 0.85 0.025 0.48 0.013 0.25 0.007 0.5 0.010 45 (typ.) 5.0 0.188 6.2 0.228 0.050 0.150 4.0 0.14 1.27 0.015 0.6 8 (max.) STS4DPFS30L MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.157 0.050 0.023 7/9 ...

Page 8

... STS4DPFS30L Table 12: Revision History Date Revision 14-Dec-2004 1 8/9 Description of Changes First Revision ...

Page 9

... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies STS4DPFS30L 9/9 ...

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