ATP207-TL-H SANYO, ATP207-TL-H Datasheet - Page 2

• Manufacturer Part Number: ATP207-TL-H
• Description: MOSFET N-CH 40V 65A ATPAK
• Manufacturer: SANYO

Specifications of ATP207-TL-H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.1 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 65A
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2710pF @ 20V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1082-2

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7057-001
Switching Time Test Circuit
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
0V
PW=10μs
D.C.≤1%
V IN
0.8
1
2.3
6.5
4
Parameter
2
2.3
V IN
50Ω
G
3
0.6
V DD =20V
D
S
I D =33A
0.55
R L =0.61Ω
ATP207
0.4
1.5
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
V OUT
Symbol
0.4
V DS =10V, I D =1mA
V DS =10V, I D =33A
I D =33A, V GS =10V
I D =17A, V GS =4.5V
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =20V, V GS =10V, I D =65A
V DS =20V, V GS =10V, I D =65A
V DS =20V, V GS =10V, I D =65A
I S =65A, V GS =0V
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
4.6
2.6
ATP207
0.4
Conditions
min
1.5
12
Ratings
typ
2710
330
220
290
170
110
1.0
20
11
27
54
14
11
7
max
15.5
2.6
9.1
1.2
No. A1319-2/4
Unit
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V