ATP208-TL-H SANYO, ATP208-TL-H Datasheet - Page 3

• Manufacturer Part Number: ATP208-TL-H
• Description: MOSFET N-CH 40V 90A ATPAK
• Manufacturer: SANYO

Specifications of ATP208-TL-H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 4510pF @ 20V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: 869-1083-2

1000
100
1.0
10
10
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
7
5
3
2
7
5
3
2
7
3
7
5
3
2
7
5
3
2
0
0.1
0.1
0
0
V DD =20V
V GS =10V
V DS =10V
0.2
I D =23A
2
2
2
3
3
0.4
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
5 7
5
4
7
0.6
1.0
45A
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
1.0
SW Time -- I D
|
I D -- V DS
6
0.8
2
y
fs | -- I D
2
3
1.0
3
8
5 7
5 7
1.2
10
10
10
1.4
2
12
3
2
1.6
Tc=25 ° C
Single pulse
5 7
3
Tc=25 ° C
14
1.8
IT14324
100
IT14322
IT14326
5 7
IT14328
ATP208
100
2.0
16
2
10000
0.001
1000
0.01
100
100
1.0
0.1
140
120
100
10
80
60
40
20
14
12
10
0
8
6
4
2
0
--60 --40 --20
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
V GS =0V
Single pulse
V DS =10V
0.5
5
0.2
1.0
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
10
1.5
Case Temperature, Tc -- ° C
0
0.4
R DS (on) -- Tc
2.0
20
15
I D -- V GS
I S -- V SD
0.6
2.5
40
20
3.0
60
0.8
25
3.5
80
1.0
100
4.0
30
No. A1396-3/4
Single pulse
120
4.5
1.2
f=1MHz
35
140
5.0
IT14323
IT14325
IT14327
IT14329
160
5.5
1.4
40