IRF6716MTR1PBF International Rectifier, IRF6716MTR1PBF Datasheet - Page 5
![MOSFET N-CH 25V 39A DIRECTFET](/photos/5/53/55367/irf6716mtr1pbf_sml.jpg)
IRF6716MTR1PBF
Manufacturer Part Number
IRF6716MTR1PBF
Description
MOSFET N-CH 25V 39A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6716MTR1PBF.pdf
(9 pages)
Specifications of IRF6716MTR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
59nC @ 4.5V
Input Capacitance (ciss) @ Vds
5150pF @ 13V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
39 A
Power Dissipation
78 W
Gate Charge Qg
39 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6716MTR1PBF
IRF6716MTR1PBFTR
IRF6716MTR1PBFTR
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
www.irf.com
1000
200
175
150
125
100
100
75
50
25
10
0
1
0
25
0.0
T J = 150°C
T J = 25°C
T J = -40°C
0.2
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.4
75
0.6
0.8
100
Fig 14. Maximum Avalanche Energy vs. Drain Current
1.0
V GS = 0V
1400
1200
1000
800
600
400
200
125
0
1.2
25
Starting T J , Junction Temperature (°C)
150
1.4
50
75
100
TOP
BOTTOM 32A
Fig 13. Typical Threshold Voltage vs. Junction
1000
3.0
2.5
2.0
1.5
1.0
100
0.1
10
1
-75 -50 -25
Fig 11. Maximum Safe Operating Area
0.01
125
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
I D
16A
19A
T A = 25°C
T J = 150°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
150
0.10
T J , Temperature ( °C )
DC
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Temperature
0
25
1.00
10msec
50
75 100 125 150
1msec
100µsec
10.00
100.00
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