IRF6716MTR1PBF International Rectifier, IRF6716MTR1PBF Datasheet - Page 6

• Manufacturer Part Number: IRF6716MTR1PBF
• Description: MOSFET N-CH 25V 39A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6716MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2.4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5150pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 78 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6716MTR1PBF; IRF6716MTR1PBFTR

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Fig 16a. Unclamped Inductive Test Circuit
R G
Fig 17a. Switching Time Test Circuit
20V
Fig 15a. Gate Charge Test Circuit
V DS
R
t p
V
V
20K
1K
V
I AS
≤ 0.1 %
≤ 1
D.U.T
0.01 Ω
L
S
D.U.T.
DUT
R
15V
L
DRIVER
+
- V
+
-
V DD
VCC
A
V
90%
10%
V
I
DS
GS
AS
Id
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Switching Time Waveforms
Vgs
Fig 15b. Gate Charge Waveform
t
d(on)
t
r
Qgodr
t p
Qgd
t
V
d(off)
(BR)DSS
Qgs2
Vgs(th)
www.irf.com
t
Vds
Qgs1
f