MTP2P50EG ON Semiconductor, MTP2P50EG Datasheet - Page 5

• Manufacturer Part Number: MTP2P50EG
• Description: MOSFET P-CH 500V 2A TO220AB
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of MTP2P50EG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1183pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 6Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 2A
• Power Dissipation: 75W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MTP2P50EGOS

maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define the
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
12
10
8
6
4
2
0
Figure 8. Gate−To−Source and Drain−To−Source
) nor rated voltage (V
0
Q
2
J(MAX)
1
4
Voltage versus Total Charge
r
,t
Q
− T
f
3
) do not exceed 10 ms. In addition the total
C
6
Q
)/(R
T
, TOTAL CHARGE (nC)
Q
8
qJC
2
).
10
Q
DSS
T
1.6
1.2
0.8
0.4
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
) is exceeded and the
2
0
0.6
Figure 10. Diode Forward Voltage versus Current
12
V
T
C
14
0.8
J
GS
) of 25°C. Peak
= 25°C
V
= 0 V
GS
V
I
T
V
D
16
SD
J
DS
= 2 A
SAFE OPERATING AREA
= 25°C
1
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
18
http://onsemi.com
1.2
20
300
250
200
150
100
50
0
1.4
5
1.6
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
1000
100
Although many E−FETs can withstand the stress of
10
1.8
1
V
I
V
T
D
DD
GS
J
= 2 A
= 25°C
DM
= 250 V
= 10 V
2
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
), the energy rating is specified at rated
2.2
R
G
, GATE RESISTANCE (OHMS)
2.4
D
), in accordance with industry
10
t
f
t
r
t
t
d(on)
d(off)
D
can safely be
100