STB15NM60ND STMicroelectronics, STB15NM60ND Datasheet - Page 4

• Manufacturer Part Number: STB15NM60ND
• Description: MOSFET N-CH 600V 14A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB15NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8470-2

Electrical ratings
4/19
Table 4.
Symbol
E
I
AS
AS
Avalanche characteristics
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
D
Parameter
= I
AS
, V
DD
= 50 V)
Max value
300
6
Unit
mJ
A