RZL035P01TR Rohm Semiconductor, RZL035P01TR Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single RZL035P01TR
Manufacturer Part Number
RZL035P01TR
Description
MOSFET P-CH 12V 3.5A TUMT6
Manufacturer
Rohm Semiconductor
Specifications of RZL035P01TR
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1V @ 1mA
Input Capacitance (ciss) @ Vds
1940pF @ 6V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
TUMT6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.036 Ohm @ 4.5 V
Gate Charge Qg
20 nC
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
3.5 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
1.5V Drive Pch MOSFET
Silicon P-channel MOSFET
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
○
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Channel to ambient
Source current
(Body diode)
∗ When mounted on a ceramic board.
c
www.rohm.com
Type
RZL035P01
Structure
Features
Application
Packaging specifications
Absolute maximum ratings (Ta=25°C)
Thermal resistance
RZL035P01
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
Rth (ch-a)
TR
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
I
DSS
GSS
DP
I
SP
D
S
D
∗1
∗1
∗2
∗
−55 to +150
Limits
Limits
±3.5
−0.8
125
−12
±10
±14
−14
150
1.0
°C / W
1/4
Unit
Unit
°C
°C
W
V
V
A
A
A
A
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Dimensions (Unit : mm)
Inner circuit
TUMT6
(6)
(1)
Abbreviated symbol : YB
(5)
(2)
∗2
∗1
(4)
(3)
2009.12 - Rev.A
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Related parts for RZL035P01TR
RZL035P01TR Summary of contents
Drive Pch MOSFET RZL035P01 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Application Switching Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 RZL035P01 Absolute maximum ratings ...
RZL035P01 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS −12 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −0.3 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ...
RZL035P01 Electrical characteristics curves 10 Ta=25°C Pulsed -4. -2. -1. -1. -1. 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE ...
RZL035P01 10 V =0V GS Pulsed 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0 0.5 1 SOURCE-DRAIN VOLTAGE : -V [V] SD Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25° - ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
Related keywords
rzl035p01tr RZL035P01TR datasheet RZL035P01TR data sheet RZL035P01TR pdf datasheet RZL035P01TR component RZL035P01TR part RZL035P01TR distributor RZL035P01TR RoHS RZL035P01TR datasheet download
