PSMN8R0-40PS,127 NXP Semiconductors, PSMN8R0-40PS,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN8R0-40PS,127
• Description: MOSFET N-CH 40V 77A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40PS,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1262pF @ 12V
• Power - Max: 86W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 77 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4893-5; 934063913127

NXP Semiconductors
PSMN8R0-40PS_2
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
10
GS
8
6
4
2
0
charge; typical values
0
5
V
10
DS
= 20 V
15
100
(A)
80
60
40
20
I
S
0
0
20
003aad062
Q
G
(nC)
25
Rev. 02 — 25 June 2009
0.3
175 °C
0.6
Fig 16. Input, output and reverse transfer capacitances
N-channel 40 V 7.6 mΩ standard level MOSFET
10
(pF)
10
10
C
4
3
2
0.9
10
as a function of drain-source voltage; typical
values
T
-1
j
= 25 °C
003aad061
V
SD
(V)
1.2
1
PSMN8R0-40PS
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aad063
C
(V)
C
C
oss
iss
rss
10
2
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