PSMN8R0-40PS,127 NXP Semiconductors, PSMN8R0-40PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN8R0-40PS,127
• Description: MOSFET N-CH 40V 77A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40PS,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1262pF @ 12V
• Power - Max: 86W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 77 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4893-5; 934063913127

NXP Semiconductors
PSMN8R0-40PS_2
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
D
a
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
0
0
2
min
60
typ
4
120
max
V
GS
T
j
(V)
( ° C)
03aa35
03aa27
180
6
Rev. 02 — 25 June 2009
Fig 12. Gate-source threshold voltage as a function of
Fig 14. Gate charge waveform definitions
V
GS(th)
(V)
N-channel 40 V 7.6 mΩ standard level MOSFET
5
4
3
2
1
0
−60
junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
PSMN8R0-40PS
D
GS
Q
GS2
60
Q
max
G(tot)
min
typ
Q
GD
120
© NXP B.V. 2009. All rights reserved.
003aaa508
003aad280
T
j
(°C)
180
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