PSMN8R0-40PS,127 NXP Semiconductors, PSMN8R0-40PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN8R0-40PS,127
• Description: MOSFET N-CH 40V 77A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40PS,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1262pF @ 12V
• Power - Max: 86W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 77 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4893-5; 934063913127

NXP Semiconductors
Table 6.
[1]
[2]
PSMN8R0-40PS_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
Measured 3 mm from package.
(A)
150
100
I
D
50
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
20
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
8
2
4
…continued
6
V
Conditions
I
see
I
V
I
V
S
S
S
GS
DS
DS
= 25 A; V
= 50 A; dI
= 50 A; dI
(V) =
Figure 17
= 20 V
= 20 V; T
8
003aad058
V
DS
5.5
4.5
7
6
(V)
5
GS
10
S
S
Rev. 02 — 25 June 2009
/dt = -100 A/µs; V
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
j
= 25 °C;
Fig 6.
N-channel 40 V 7.6 mΩ standard level MOSFET
R
(mΩ)
GS
GS
DSon
20
15
10
5
0
= 0 V;
= 0 V;
of drain current; typical values
Drain-source on-state resistance as a function
0
V
GS
(V) =
5.5
50
PSMN8R0-40PS
Min
-
-
-
6
Typ
0.85
30
18
100
7
© NXP B.V. 2009. All rights reserved.
I
003aad059
D
Max
1.2
-
-
(A)
10
8
20
150
Unit
V
ns
nC
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