IRFH5250DTR2PBF International Rectifier, IRFH5250DTR2PBF Datasheet - Page 3

MOSFET N-CH 25V 40A 8VQFN

IRFH5250DTR2PBF

Manufacturer Part Number
IRFH5250DTR2PBF
Description
MOSFET N-CH 25V 40A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5250DTR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
2.35V @ 150µA
Gate Charge (qg) @ Vgs
83nC @ 10V
Input Capacitance (ciss) @ Vds
6115pF @ 13V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
40 A
Power Dissipation
3.6 W
Gate Charge Qg
39 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5250DTR2PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5250DTR2PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
Fig 3. Typical Transfer Characteristics
1.0
10
10
Fig 1. Typical Output Characteristics
1
0.1
1
1
2.7V
V DS , Drain-to-Source Voltage (V)
T J = 150°C
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
1
C rss
C oss
C iss
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
10
V DS = 15V
≤60µs PULSE WIDTH
3
T J = 25°C
10
TOP
BOTTOM
4
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
100
5
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
8.0
6.0
4.0
2.0
0.0
1
1.6
1.4
1.2
1.0
0.8
0.6
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 50A
I D = 50A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
2.7V
20
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
1
40
V DS = 20V
V DS = 13V
≤ 60µs PULSE WIDTH
Tj = 150°C
60
10
80
TOP
BOTTOM
100
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
120
3

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