IRFH5250DTR2PBF International Rectifier, IRFH5250DTR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5250DTR2PBF
• Description: MOSFET N-CH 25V 40A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5250DTR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 6115pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5250DTR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
Fig 15a. Switching Time Test Circuit
4
3
2
1
0
2
R G
20V
V DS
4
V GS, Gate -to -Source Voltage (V)
t p
6
≤ 0.1
≤ 1
I AS
D.U.T
0.01 Ω
L
8
T J = 25°C
10
T J = 125°C
12
15V
14
DRIVER
16
I D = 50A
+
-
+
-
V DD
18
A
20
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
2000
1800
1600
1400
1200
1000
800
600
400
200
90%
V
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 50A
t
f
125
I D
18A
24A
150
5