IRFH5250DTR2PBF International Rectifier, IRFH5250DTR2PBF Datasheet - Page 8

• Manufacturer Part Number: IRFH5250DTR2PBF
• Description: MOSFET N-CH 25V 40A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5250DTR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.35V @ 150µA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 6115pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5250DTR2PBFTR

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Revision History
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5x6 Outline "B" Tape and Reel
R
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
8
3/26/2010
Starting T
test capability.
θ
is measured at
Date
Qualification standards can be found at International Rectifier’s web site
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
http://www.irf.com/product-info/reliability
J
= 25°C, L = 0.37mH, R
Idss limits at Tj 25°C is changed to 500µA max and at Tj 125°C it is changed to 5.0mA max. All
other parameters remain unchanged.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
J
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G
= 25Ω, I
AS
= 50A.
PQFN 5mm x 6mm
Visit us at www.irf.com for sales contact information. 03/2010
(per JE DE C JE S D47F
Comment
Data and specifications subject to change without notice.
Indus trial
Yes
(per JE DE C J-S T D-020D
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guidelines )
TAC Fax: [phone]
MS L1
www.irf.com
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)