IRFU2607ZPBF International Rectifier, IRFU2607ZPBF Datasheet

MOSFET N-CH 75V 42A I-PAK

IRFU2607ZPBF

Manufacturer Part Number
IRFU2607ZPBF
Description
MOSFET N-CH 75V 42A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRFU2607ZPBF.pdf (11 pages)
2.IRFR2607ZPBF.pdf (12 pages)

Specifications of IRFU2607ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
1440pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
45A
Drain Source Voltage Vds
75V
On Resistance Rds(on)
17.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Operating Temperature Range
-55°C To +175°C
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
34 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
l
l
l
l
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Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
www.irf.com
Description
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θJA
θJA
@ T
@ T
@ T
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Ã
j
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
ij
(Silicon Limited)
(Package Limited)
h
G
See Fig.12a, 12b, 15, 16
Typ.
HEXFET
300 (1.6mm from case )
–––
–––
–––
10 lbf
IRFR2607Z
S
D
IRFR2607ZPbF
IRFU2607ZPbF
-55 to + 175
D-Pak
y
Max.
in (1.1N
0.72
180
110
± 20
45
32
42
96
96
®
R
Power MOSFET
DS(on)
V
y
m)
Max.
DSS
1.38
I
110
40
D
IRFU2607Z
= 42A
= 75V
= 22mΩ
PD - 95953
I-Pak
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFU2607ZPBF Summary of contents

Page 1

... Junction-to-Ambient (PCB mount) R θJA Junction-to-Ambient R θJA www.irf.com AUTOMOTIVE MOSFET G Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter 95953 IRFR2607ZPbF IRFU2607ZPbF ® HEXFET Power MOSFET 75V DSS R = 22mΩ DS(on 42A D S D-Pak I-Pak IRFR2607Z IRFU2607Z Max. Units 180 110 W 0 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100.0 T ...

Page 4

0V MHZ C iss = SHORTED 2000 C rss = oss = 1600 Ciss 1200 800 400 ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 30A ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

EXAMPLE: T HIS IS AN IRFR120 WIT EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-Free" OR www.irf.com INT ...

Page 10

E XAMPL HIS 120 WIT CODE 5678 19, 1999 ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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