IRFU2607ZPBF International Rectifier, IRFU2607ZPBF Datasheet

MOSFET N-CH 75V 42A I-PAK

IRFU2607ZPBF

Manufacturer Part Number
IRFU2607ZPBF
Description
MOSFET N-CH 75V 42A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFU2607ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
1440pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
45A
Drain Source Voltage Vds
75V
On Resistance Rds(on)
17.6mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Operating Temperature Range
-55°C To +175°C
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
45 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
34 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Description
Features
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
www.irf.com
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
@ T
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Power MOSFET utilizes the latest
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Ã
j
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
ij
(Silicon Limited)
(Package Limited)
h
G
IRFR2607ZPbF
D-Pak
See Fig.12a, 12b, 15, 16
Typ.
HEXFET
300 (1.6mm from case )
–––
–––
–––
10 lbf
S
D
IRFR2607ZPbF
IRFU2607ZPbF
-55 to + 175
IRFU2607ZPbF
y
Max.
in (1.1N
0.72
180
110
± 20
45
32
42
96
96
®
R
I-Pak
Power MOSFET
DS(on)
V
y
m)
Max.
DSS
1.38
I
110
40
D
= 42A
PD - 95953A
= 22m
= 75V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFU2607ZPBF Summary of contents

Page 1

... GS @ 10V GS @ 10V (Package Limited Parameter 95953A IRFR2607ZPbF IRFU2607ZPbF ® HEXFET Power MOSFET 75V DSS R = 22m DS(on 42A D S I-Pak IRFU2607ZPbF Max. Units 180 110 W 0.72 W/°C ± See Fig.12a, 12b 175 °C 300 (1.6mm from case ) lbf in (1.1N m) Typ. Max. Units – ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = 1600 Ciss 1200 800 400 ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 30A ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" ssembly line position indicates "Lead-Free" qualification ...

Page 10

EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 2001 IN THE ASS EMB LY LINE "A" Note: "P" in ass embly line pos ition indicates Lead-Free" OR INT ERNATIONAL ...

Page 11

NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: ...

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