IRFU2607ZPBF International Rectifier, IRFU2607ZPBF Datasheet - Page 4

• Manufacturer Part Number: IRFU2607ZPBF
• Description: MOSFET N-CH 75V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU2607ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 45A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 17.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +175°C
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000.0
2400
2000
1600
1200
100.0
800
400
10.0
1.0
0.1
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.8
T J = 25°C
Coss
Crss
Ciss
1.2
f = 1 MHZ
10
1.6
V GS = 0V
2.0
2.4
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 30A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 60V
VDS= 30V
VDS= 12V
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
100
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100µsec
10msec
1msec
DC
40
1000
50