STB16NM50N STMicroelectronics, STB16NM50N Datasheet - Page 5

• Manufacturer Part Number: STB16NM50N
• Description: MOSFET N-CH 500V 15A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB16NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 50V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7938-2; STB16NM50N

STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Table 7.
Table 8.
1.
Symbol
Symbol
V
t
t
I
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
SDM
RRM
RRM
I
SD
Q
Q
t
t
SD
t
t
r
f
rr
rr
rr
rr
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 18)
I
I
V
(see Figure 23)
V
di/dt =100 A/µs, I
Tj = 150 °C
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
=15 A, di/dt =100 A/µs,
= 15 A, V
= 250 V, I
= 100 V
= 100 V
Test conditions
Test conditions
(see Figure 23)
GS
D
GS
=0
= 7.5 A,
SD
= 10 V
= 15 A
Electrical characteristics
Min.
Min.
Typ
400
500
Typ
24
24
20
15
60
16
5
6
Max
Max Unit
1.3
15
60
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/18