STP80NF10FP STMicroelectronics, STP80NF10FP Datasheet - Page 5

MOSFET N-CH 100V 38A TO-220FP

STP80NF10FP

Manufacturer Part Number
STP80NF10FP
Description
MOSFET N-CH 100V 38A TO-220FP
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP80NF10FP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
189nC @ 10V
Input Capacitance (ciss) @ Vds
4300pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5897-5
STP80NF10FP

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STP80NF10FP
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
SD
RRM
I
Q
t
SD
t
t
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 14)
I
I
di/dt = 100A/µs,T
SD
SD
DD
G
=80A, V
= 4.7Ω, V
= 80A, V
Test condictions
Test condictions
= 50V, I
DD
D
GS
GS
= 40A,
= 50V
=10V
= 0
j
=150°C
Electrical characteristics
Min
Min.
Typ.
Typ.
155
850
145
134
115
11
40
Max. Unit
Max
152
1.3
38
Unit
nC
ns
ns
ns
ns
ns
5/12
A
A
V
A

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