IRFB4310ZPBF International Rectifier, IRFB4310ZPBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4310ZPBF
• Description: MOSFET N-CH 100V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4310ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6860pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 120 A
• Gate Charge, Total: 120 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 4.8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 127 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
V
ΔV
R
V
I
I
R
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
gs
gd
sync
rr
above the Eas value and test conditions.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
2
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
temperature.
I
R
Symbol
Symbol
Symbol
(BR)DSS
SD
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)h –––
≤ 75A, di/dt ≤ 600A/μs, V
= 25Ω, I
/ΔT
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 75A, V
= 25°C (unless otherwise specified)
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.047mH
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
J
g
≤ 175°C.
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
…
†
‡
ˆ
‰
mended footprint and soldering techniques refer to application note #AN-994.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
C
as C
C
oss
θ
oss
oss
6860
0.11
–––
–––
–––
–––
–––
–––
–––
120
490
220
570
920
––– 127c
–––
–––
4.8
0.7
2.5
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
29
35
85
20
60
55
57
40
49
58
89
while V
-100
–––
–––
250
100
–––
–––
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
560
–––
DS
6.0
4.0
1.3
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
μA
nA
nC
nC
pF
ns
ns
Ω
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A, V
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.7Ω
= V
= 100V, V
= 80V, V
= 50V, I
=50V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V g
= 65V
= 10V g
= 0V
= 0V, V
= 0V, V
GS
, I
D
DS
DSS
D
S
DS
DS
D
D
= 250μA
GS
= 75A, V
= 150μA
= 75A
=0V, V
= 75A g
GS
DSS
= 0V to 80V i, See Fig. 11
= 0V to 80V h
.
Conditions
Conditions
Conditions
= 0V, T
= 0V
.
V
I
di/dt = 100A/μs g
F
R
= 75A
D
GS
= 85V,
GS
= 5mAd
J
= 10V
= 125°C
= 0V g
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G
D
S