IRFB4310ZPBF International Rectifier, IRFB4310ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRFB4310ZPBF
• Description: MOSFET N-CH 100V 120A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4310ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6860pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 120 A
• Gate Charge, Total: 120 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 250 W
• Resistance, Drain To Source On: 4.8 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 55 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 127 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Maximum Avalanche Energy vs. Temperature
140
120
100
80
60
40
20
0
25
0.001
100
0.01
0.1
0.1
10
Starting T J , Junction Temperature (°C)
1
1.0E-06
1
1E-006
50
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
Duty Cycle = Single Pulse
TOP
BOTTOM 1% Duty Cycle
I D = 75A
75
0.20
0.02
0.01
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
100
Single Pulse
0.01
0.05
0.10
1.0E-05
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
175
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ΔT
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14).
t
D = Duty cycle in avalanche = t
Z
tav (sec)
av
av =
thJC
D (ave)
τ
J
= Allowable avalanche current.
=
τ
J
τ
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
1
Ci= τi/Ri
τ
1
Ci
= Average power dissipation per single avalanche pulse.
av
i/Ri
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
) = Transient thermal resistance, see Figures 13)
R
jmax
1
R
1.0E-03
1
0.001
. This is validated for every part type.
τ
2
R
τ
2
2
P
R
2
D (ave)
R
τ
3
3
R
τ
3
3
= 1/2 ( 1.3·BV·I
I
E
av
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
AS (AR)
= 2DT/ [1.3·BV·Z
τ
R
4
av
τ
4
R
4
4
·f
1.0E-02
τ
= P
C
τ
0.01
Ri (°C/W)
0.018756 0.000007
0.159425 0.000117
0.320725 0.001817
0.101282 0.011735
D (ave)
av
) = DT/ Z
·t
th
av
]
τι (sec)
jmax
thJC
jmax
is not exceeded.
1.0E-01
(assumed as
0.1
5