IRFB4310ZPBF International Rectifier, IRFB4310ZPBF Datasheet - Page 3

MOSFET N-CH 100V 120A TO-220AB

IRFB4310ZPBF

Manufacturer Part Number
IRFB4310ZPBF
Description
MOSFET N-CH 100V 120A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRFB4310ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6860pF @ 50V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
120 A
Gate Charge, Total
120 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
250 W
Resistance, Drain To Source On
4.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
55 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
150 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
127 A
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
12000
10000
1000
1000
8000
6000
4000
2000
100
100
0.1
10
10
1
1
0
0.1
2.0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
TOP
BOTTOM
T J = 175°C
V DS , Drain-to-Source Voltage (V)
3.0
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Crss
Coss
Ciss
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
4.0
1
V DS = 50V
≤ 60μs PULSE WIDTH
T J = 25°C
5.0
≤ 60μs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
10
6.0
7.0
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 75A
TOP
BOTTOM
I D = 75A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
40
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
V DS = 80V
VDS= 50V
VDS= 20V
1
20 40 60 80 100 120 140 160 180
80
≤ 60μs PULSE WIDTH
Tj = 175°C
4.5V
120
10
160
200
100
3

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