RJU003N03T106 Rohm Semiconductor, RJU003N03T106 Datasheet

RJU003N03T106

Manufacturer Part Number

RJU003N03T106

Description

MOSFET N-CH 30V 300MA SOT-323

Manufacturer

Rohm Semiconductor

Datasheet

1.RJU003N03T106.pdf (5 pages)

Specifications of RJU003N03T106

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.1 Ohm @ 300mA, 4.5V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

300mA

Vgs(th) (max) @ Id

1.5V @ 1mA

Input Capacitance (ciss) @ Vds

24pF @ 10V

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70-3, SOT-323-3

Transistor Polarity

N Channel

Continuous Drain Current Id

300mA

Drain Source Voltage Vds

30V

On Resistance Rds(on)

1.1ohm

Rds(on) Test Voltage Vgs

4.5V

Voltage Vgs Max

12V

Operating Temperature

RoHS Compliant

Configuration

Single

Resistance Drain-source Rds (on)

1.1 Ohm @ 4.5 V

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

0.3 A

Power Dissipation

200 mW

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

RJU003N03T106TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

RJU003N03T106

Manufacturer:

ROHM/罗姆

Quantity:

20 000

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2.5V Drive Nch MOSFET

Silicon N-channel MOSFET

1) Low On-resistance.

2) Low voltage drive (2.5V drive).

Switching

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

∗ Each terminal mounted on a recommended land

○

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of storage temperature

Channel to ambient

www.rohm.com

Type

RJU003N03

Structure

Features

Applications

Packaging specifications and h

Absolute maximum ratings (Ta=25°C)

Thermal resistance

RJU003N03

Package

Code

Basic ordering unit (pieces)

Parameter

Continuous

Pulsed

Taping

T106

3000

Rth(ch-a)

Symbol

Tstg

Tch

DSS

GSS

∗1

∗2

∗

−55 to +150

Limits

±300

±1.2

200

150

625

±12

1/4

(1) Source

(2) Gate

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Dimensions (Unit : mm)

UMT3

Inner circuit

°C/W

Unit

(2)

°C

∗1

Abbreviated symbol : LP

0.65

( 3 )

( 2 )

2.0

1.3

0.65

(3)

(1)

0.3

( 1 )

Each lead has same dimensions

0.2

(1)

(2)

(3)

∗2

0.15

0.9

0.7

Source

Gate

Drain

2009.03 - Rev.A

Related parts for RJU003N03T106

RJU003N03T106 Summary of contents

Page 1

Drive Nch MOSFET RJU003N03 Structure Silicon N-channel MOSFET Features 1) Low On-resistance. 2) Low voltage drive (2.5V drive). Applications Switching Packaging specifications and h FE Package Taping Type Code T106 3000 Basic ordering unit (pieces) RJU003N03 Absolute maximum ratings ...

Page 2

RJU003N03 Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward transfer ...

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RJU003N03T106 Rohm Semiconductor, RJU003N03T106 Datasheet

RJU003N03T106

Specifications of RJU003N03T106

Available stocks

Related parts for RJU003N03T106

RJU003N03T106 Summary of contents

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