RHP020N06T100 Rohm Semiconductor, RHP020N06T100 Datasheet - Page 4

• Manufacturer Part Number: RHP020N06T100
• Description: MOSFET N-CH 60V 2A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of RHP020N06T100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 2000 mW
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RHP020N06T100TR

RHP020N06
○
c
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2009 ROHM Co., Ltd. All rights reserved.
0.001
1000
0.01
100
0.6
0.5
0.4
0.3
0.2
0.1
0.1
10
10
0
GATE-SOURCE VOLTAGE : V
Fig.10 Static Drain-Source On-State
1
0.001
0.01
0
Ta=25°C
f=1MHz
V
GS
I
DRAIN-SOURCE VOLTAGE : V
D
Resistance vs. Gate Source Voltage
= 1.0A
=0V
Fig.13 Typical Capacitance
0.1
Crss
0.01
5
Fig.15 Normalized Transient Thermal Resistance vs. Pulse W idth
vs. Drain-Source Voltage
I
D
= 2.0A
1
Coss
10
0.1
Ta=25°C
Pulsed
GS
10
[V]
PULSE WIDTH : Pw(s)
Ciss
DS
[V]
100
15
1
Ta = 25°C
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a SERAMIC board>
1000
100
0.001
10
10
0.01
100
1
0.1
10
0.01
1
0.1
Fig.11 Switching Characteristics
Ta = 25°C
Single Pulse
MOUNTED ON SERAMIC BOARD
Fig.14 Maximum Safe Operating Aera
Operation in this area is limited by R
(V
DRAIN-SOURCE VOLTAGE : V
GS
DRAIN-CURRENT : I
= 10V)
100
DC operation
t
d
(off)
0.1
1
4/4
t
d
1000
t
(on)
f
P
W
= 10ms
1
Ta=25°C
V
V
R
Pulsed
10
DD
GS
G
D
=10Ω
[A]
=10V
= 30V
t
r
100us
1ms
DS(ON)
DS
10
[V]
100
9
8
7
6
5
4
3
2
1
0
0
Fig.12 Dynamic Input Characteristics
TOTAL GATE CHARGE : Qg [nC]
1
2
3
2009.03 - Rev.A
4
Ta=25°C
V
I
R
Pulsed
D
DD
= 2.0A
G
=10Ω
= 30V
Data Sheet
5
6