SI2307BDS-T1-E3 Vishay, SI2307BDS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2307BDS-T1-E3
• Description: MOSFET P-CH 30V 2.5A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI2307BDS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 78 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.078 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3.2A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 1.25W
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.078Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2307BDS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72699
S-80427-Rev. C, 03-Mar-08
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
12
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
I
D
DS
V
= 3 A
On-Resistance vs. Drain Current
GS
= 15 V
V
2
2
2
GS
V
= 4.5 V
DS
Q
Output Characteristics
= 10 thru 5 V
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
4
4
4
6
6
6
V
GS
= 10 V
8
8
8
4 V
3 V
2 V
10
10
10
700
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
12
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
0.5
C
- 25
V
I
D
rss
GS
= 3.2 A
5
V
= 10 V
1.0
DS
V
T
Transfer Characteristics
GS
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
1.5
- Gate-to-Source Voltage (V)
10
oss
Capacitance
25
T
2.0
C
= 125 °C
15
50
25 °C
Vishay Siliconix
2.5
C
iss
Si2307BDS
75
3.0
20
www.vishay.com
100
- 55 °C
3.5
25
125
4.0
150
4.5
30
3